| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-954 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0227 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 |
| filingDate |
2003-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8141e5701e44c0a214d588dec50a1e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4680eac2412c0027c18e6f9f7b8bcc1a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbd3ed260a501680f2553f59bd1ffb9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16425a3d4feb37227887bb3e749dff5c |
| publicationDate |
2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I234226-B |
| titleOfInvention |
Method of fabricating dielectric layer |
| abstract |
Disclosed is a method of fabricating a dielectric layer, the method comprising the steps of: providing a semiconductor substrate which has been washed; forming a first nitride film by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment; forming a first oxide film by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by means of air introduced while the substrate is unloaded; forming a second nitride film by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment; and forming a second oxide film by subjecting the top surface of the second nitride film to a second oxide treatment. |
| priorityDate |
2003-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |