| abstract |
Provided is a semiconductor module without support substrate, being thin and light, and having excellent product reliability and high frequency properties, wherein a multilayer wiring construction is provided right under the circuit elements 410a, 410b, and the interlayer insulating film 405 for constituting the multilayer wiring construction is made of the material having a relative dielectric constant more than 1.0, less than 3.7 and a dielectric loss taught more than 0.0001, less than 0.02. |