Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f09378c018e7719f171f7e91f2dd60fd |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2-50 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-029 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-50 |
filingDate |
2003-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c4ce2e2edb82c495ff5d52a9cc9634a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16cf56b86b30501f8beab69bb0761590 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d23ebe2ff7fd4339040395a910f954c |
publicationDate |
2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I234053-B |
titleOfInvention |
Semiconductor laser-curable resin composition and resist pattern-forming method by use of the same |
abstract |
The present invention provides a semiconductor laser-curable resin composition, which comprises (A) photosensitive resin and (B) photo polymeric initiator, wherein the maximum wave length of the semi-conductor laser is within the range of 400 nm to 410 nm and the photo polymeric initiator (B) is bisacyl phosphine oxide (B1) or the mixture of the photo polymeric initiator (B1) and other initiator (B2), as well as the resist pattern-forming method by use of the said composition. |
priorityDate |
2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |