http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I234053-B

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filingDate 2003-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c4ce2e2edb82c495ff5d52a9cc9634a
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publicationDate 2005-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I234053-B
titleOfInvention Semiconductor laser-curable resin composition and resist pattern-forming method by use of the same
abstract The present invention provides a semiconductor laser-curable resin composition, which comprises (A) photosensitive resin and (B) photo polymeric initiator, wherein the maximum wave length of the semi-conductor laser is within the range of 400 nm to 410 nm and the photo polymeric initiator (B) is bisacyl phosphine oxide (B1) or the mixture of the photo polymeric initiator (B1) and other initiator (B2), as well as the resist pattern-forming method by use of the said composition.
priorityDate 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.