http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I233640-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-80 |
filingDate | 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2005-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b26639a2172ca2d111056f8db36b40f |
publicationDate | 2005-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I233640-B |
titleOfInvention | Method of etching a chromium-based thin film and method of producing a photomask |
abstract | In an object having a chromium-based thin film made of a material containing chromium, the thin film is etched with a resist pattern used as a mask. To a dry etching gas containing a halogen-containing gas and an oxygen-containing gas, plasma-exciting power is supplied to excite plasma. By the use of chemical species produced by plasma excitation, the thin film is etched. Etching of the thin film is carried out with the plasma exciting power which is lower than plasma exciting power at which density jump of the plasma occurs. |
priorityDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.