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filingDate 2004-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b26639a2172ca2d111056f8db36b40f
publicationDate 2005-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I233640-B
titleOfInvention Method of etching a chromium-based thin film and method of producing a photomask
abstract In an object having a chromium-based thin film made of a material containing chromium, the thin film is etched with a resist pattern used as a mask. To a dry etching gas containing a halogen-containing gas and an oxygen-containing gas, plasma-exciting power is supplied to excite plasma. By the use of chemical species produced by plasma excitation, the thin film is etched. Etching of the thin film is carried out with the plasma exciting power which is lower than plasma exciting power at which density jump of the plasma occurs.
priorityDate 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.