| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q2900-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Y2200-11 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q1-326 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-28 |
| filingDate |
2004-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59e3266568bccf0075b6f9686b0642f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b157d88743a75b76fb4d31e322781dd3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3513b347aaa7c5acdf973d1b41606751
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78 |
| publicationDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I232599-B |
| titleOfInvention |
Semiconductor light emitting device |
| abstract |
A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer (4) positioned between an n-type ZnMgSSe cladding layer (3) and a p-type ZnMgSSe cladding layer (5), and has a barrier layer (11) having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer (4) and the p-type ZnMgSSe cladding layer (5). |
| priorityDate |
2003-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |