| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe950d708c7cd3395969c85dcbe67c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-963 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate |
2003-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f46c6d04434a311bea4bc8bc59ce157e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d571a12a32400cdca0902574bb18a5e |
| publicationDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I232590-B |
| titleOfInvention |
Trench Schottky barrier diode |
| abstract |
A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (""epi"") layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area. |
| priorityDate |
2002-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |