http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I232496-B

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filingDate 2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ed225a22fbdfd13ecd30f84f25011aa
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publicationDate 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I232496-B
titleOfInvention Integrated circuits with air gaps and method of making same
abstract An integrated circuits with air gaps is disclosed. An underlayer is formed on a substrate. A first metal pattern is formed on the underlayer. A dielectric layer is deposited on the underlayer and the first metal pattern. A second metal pattern is formed on the dielectric layer. Utilizing the first metal pattern and the second metal pattern as masks, an isotropic etch process is performed on the dielectric layer and the underlayer. A plurality of holes is formed in the dielectric layer and the remaining dielectric layer serves as supports under the second metal pattern. A chemical vapor deposition process is performed to deposit a cap layer on the second metal pattern and to seal the holes.
priorityDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.