http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I232481-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2003-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa93f78e0540c723b6c1b67dc3e9004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4925ce63ebc8e5e29ec3438ddc918ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc72669bf4cbdef0f5057932d01aaf2a
publicationDate 2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I232481-B
titleOfInvention Manufacturing method for semiconductor device and the semiconductor device
abstract The present invention provides a manufacturing method for semiconductor device, which includes the following steps: forming a first low-k insulation film on a semiconductor substrate; forming the photoresist pattern on the first low-k insulation film; using the photoresist pattern to etch the first low-k insulation film; forming the recess portion in the first low-k insulation film; after removing the photoresist pattern, burying the conductive film into the recess portion; after burying the conductive film and during removing the photoresist pattern, removing the deteriorated layer on the sidewall of the recess portion of the first low-k insulation film; and, forming the second low-k insulation film as generating the clearance on the sidewall of the recess portion by burying and removing the deteriorated layer.
priorityDate 2002-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.