http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I231633-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e565b6678873d9f256e8fec9ada071ee |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028 |
filingDate | 2004-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59202aacc55b8c339144110fa9bf7588 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4e0f7da7a9b437fd482825e3c5265ab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2b0ca57a263f43acb7851fd8bb6f37d |
publicationDate | 2005-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I231633-B |
titleOfInvention | Semiconductor laser device and manufacturing method thereof |
abstract | A manufacturing method of semiconductor laser device includes following processes. First, a structure of epitaxial layers is provided on a substrate. Second, a mask layer is formed on the structure of epitaxial layers to define a selective activation region. Then, an ion implantation region is formed beyond the selectivity activation region by ion implanting the structure of epitaxial layers. And the ion implantation region has a first resistance. Thereafter, the mask layer is removed, and then the high temperature heating method is performed to selectively activate the selective activation region and to change the ion implantation region into a current resistance region. The current resistance region has a second resistance higher than the first resistant value. The method not only can provide a flat ohm contact layer to simplify the process and improve the yield but also can avoid the current diffusion effect to improve the performance of the device. |
priorityDate | 2004-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.