| abstract |
In a dummy word line region, a second metal interconnection line is arranged, and a connection between a low-resistive metal interconnection line constituting a word line arranged in a normal word line region and a lower gate electrode line is shifted. In a bit line twisting region, a memory cell gate electrode line is arranged to interconnect the gates of access transistors of memory cells, and a twisted bit line structure is implemented utilizing an upper metal interconnection line. A memory cell array region can more efficiently be used. |