http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I231053-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate | 2004-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_481ec0df974cd55027dac3cd6e1d9215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de5a96c7b4fd1e0ecc526d46c7295217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24f21b38dc98f2ff8484f9ded4ff29e2 |
publicationDate | 2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I231053-B |
titleOfInvention | Semiconductor light emitting device and the manufacturing method thereof |
abstract | The subject of the present invention is to provide a light emitting diode device in high light emitting efficiency and high brightness. The solution of the present invention is to compose the cover layer at the anode, and the cover layer at the anode includes: undoped AlInP layer, which is connected with the active layer and grown in depth larger than 0.5 mum; and, a middle layer having a middle energy gap with the energy gap for the undoped AlInP layer and the energy gap for the window layer, and conducting the p-type doping for connecting with the window layer; furthermore, forming the distribution electrodes on part of the surface of the current diffusion layer, configuring the transparent conductive film covering the current diffusion layer and the distribution electrode, and configuring the bottom electrodes on the transparent conductive film. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8389389-B2 |
priorityDate | 2003-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.