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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-492
filingDate 2002-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cfcaba054892ec23ea8b98cfdcacae6
publicationDate 2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I231025-B
titleOfInvention Method for plating metal layer over pads on substrate for semiconductor package
abstract A method for plating a metal layer over pads on a substrate for a semiconductor package is proposed. The substrate is formed with a plurality of pads on at least a surface thereof, and a conductive film is formed on the surface of the substrate. A first resist layer is applied over the conductive film and formed with a plurality of through holes penetrating the first resist layer and the conductive film, for exposing the pads on the substrate to the atmosphere, which a portion of the conductive film is remained within the through hole. Then, a second resist layer is applied over the first resist layer to cover the remaining conductive film exposed within the through hole. After a metal layer such as Ni/Au is deposited on the pads by a plating method, the second resist layer, first resist layer and the remaining conductive film underneath the resist layer are removed. Finally, a solder mask is applied on the surface of the substrate and formed with a plurality of openings for exposing the pads with the plating metal layer thereon; this can eliminate drawbacks induced by conventional chemical Ni/Au deposition, and effectively increase routing area of the substrate without having to form plating traces on the substrate.
priorityDate 2002-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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