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publicationDate 2005-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I229891-B
titleOfInvention Semiconductor device and method of manufacturing the same
abstract A semiconductor device comprises a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode and made of a perovskite type ferroelectrics containing Pb, Zr, Ti and O, the dielectric film comprising a first portion formed of a plurality of crystal grains partitioned by grain boundaries having a plurality of directions.
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