http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I226658-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2003-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d2cc4c8e467f6f86d026252e4f82c12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a96b091f80b5b4f0fea96f9df0d6324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f0f4f03afc7eb0292e5a8c6b778a172 |
| publicationDate | 2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I226658-B |
| titleOfInvention | Method of filling intervals and method of fabricating a shallow trench isolation |
| abstract | Method of filling intervals is described. A substrate having several patterns thereon is provided, and several intervals are located between the patterns. A first dielectric layer is formed to fill the intervals between the patterns, and cover the patterns. Also several apertures are formed in the formed first dielectric layer, and whose positions are higher than the top of the patterns. A chemical mechanical polishing process is performed for removing the partial first dielectric layer to make the apertures open to form several openings. An anisotropic etch process is performed to expand the width of the openings. A second dielectric layer is formed on the first dielectric layer to fill the openings. |
| priorityDate | 2003-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.