http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I226501-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1df0c0c4dd30b91733f9c5cd95d28996 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate | 2003-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68e7be1ab4c743157df7da338cf2cec3 |
| publicationDate | 2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I226501-B |
| titleOfInvention | Method of forming a thin film transistor liquid crystal display |
| abstract | A gate insulating layer, an amorphous silicon layer and a metal layer are sequentially formed on a gate formed on a substrate of a thin film transistor liquid crystal display (TFT LCD). A first photoresist layer and a second photoresist layer with an opening are then sequentially formed on the metal layer. Two etching processes are performed to form a source and a drain of the LCD display thereafter. Finally, a passivation layer is formed to cover the substrate. |
| priorityDate | 2003-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.