| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3fb751fc1583ed35203425a4bd16589f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-14 |
| filingDate |
2002-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94173ca27c993cd459e09ffcc9b79e3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7ff75e53e43163d956551592d98b7bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26791cc12bbf153912ff931c654fc2b9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16fdc2e727c2c7654d4d62fb611e0125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c578b6662cc4824c4cf873e36df2701 |
| publicationDate |
2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I226389-B |
| titleOfInvention |
Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot |
| abstract |
The natural convection (20) in the melt (5) in a quartz crucible (3) is controlled by regulating the temperatures at a plurality of parts of the melt (5). A single crystal semiconductor (6) can have a desired diameter by regulating the amount of heat produced by heating means (9a) on the upper side. Further the ratio between the amount of heat produced by the upper-side heating means (9a) and that by the lower-side heating means (9b) is adjusted to vary the process condition. In the adjustment, the amount of heat produced by the lower-side heating means (9b) is controlled to a relatively large proportion. Without inviting high cost and large size of the manufacturing apparatus, the oxygen concentration distribution in the axial direction of the single crystal semiconductor, the diameter of the single crystal semiconductor, and the minute fluctuation of the oxygen concentration in the axial direction are controlled. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I726794-B |
| priorityDate |
2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |