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filingDate 2002-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00bdb74a0022d7b8689bf37e3d9b1920
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publicationDate 2004-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I223881-B
titleOfInvention Plural semiconductor devices in monolithic flip chip
abstract A flip chip structure contains laterally spaced semiconductor devices such as MOSFETs in a common chip. A deep trench isolates the devices. Contacts are connected to the source drain and gate electrode (or other electrodes) and are interconnected as required for a circuit function either within the chip or on the support board. Ball contacts are connected to the electrodes. The opposite surface of the chip to that in which the devices are formed receives a copper or other metal layer which is patterned to increase its area for heat exchange. The surface of the copper is coated with black oxide to increase its ability to radiate heat.
priorityDate 2001-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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