http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I222169-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2003-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a42541e19c5bacc5ea7b2088bf9752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f3c97d8cb3114cf9c8349181c60fa9b |
| publicationDate | 2004-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I222169-B |
| titleOfInvention | Method of fabricating copper damascene structure |
| abstract | A method of fabricating copper damascene structure. According to this method, a semiconductor substrate having an interlayer dielectric thereon is provided. An opening is formed in the dielectric layer. A first metal layer is deposited on the interlayer dielectric and filled into the opening. The first metal layer is polished to remove excess copper until the dielectric layer is exposed. A second metal layer is formed on the dielectric and the first metal layer. The second metal layer is polished to expose the dielectric. On the top of the trench opening, the remained second metal layer covered the first metal layer. Utilizing the electrochemical contact displacement process, the remained second metal layer is displaced by the first metal layer. Then, a copper damascene structure with smooth surface is obtained. |
| priorityDate | 2003-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.