| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
1999-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ff697ffc9773990d9f9f8ec87811f6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4dc21e3ed67b3018977d9d82bb6f7c3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27ecaa9358dc75a9fdde2df5567c73ba |
| publicationDate |
2004-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I222136-B |
| titleOfInvention |
Method for etching silicon dioxide using fluorocarbon gas chemistry |
| abstract |
A semiconductor manufacturing process wherein deep and narrow 0.6 micron and smaller openings are plasma etched in doped and undoped silicon oxide. The etching gas includes fluorocarbon, oxygen and nitrogen reactants which cooperate to etch the silicon oxide while providing enough polymer build-up to obtain anisotropically etched openings and avoid etch stop of etched openings having aspect ratios of 5:1 and higher. The process is useful for etching 0.25 micron and smaller contact or via openings and can be carried out in a parallel plate plasma reactor having a showerhead electrode. |
| priorityDate |
1998-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |