http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I220170-B

Outgoing Links

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2002-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58133bba1fd270ba49280caa7c323a75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e221e6779be15828da7dfb9109f15af6
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publicationDate 2004-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I220170-B
titleOfInvention Process of probing a wafer
abstract A process of probing a wafer includes the following steps. First, the wafer is provided with a passivation layer and at least one contact pad, both of which are on an active surface of the wafer. The passivation layer has an opening exposing the contact pad. Micro-contamination material is absorbed on the contact pad and on the passivation layer. This micro-contamination can cause overkill issue during circuit probing (CP test). The micro-contamination material is removed by an argon sputtering process in this invention. The overkill issue of CP test could be eliminated by adding in this physical clean.
priorityDate 2002-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.