| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45514
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-32 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12 |
| filingDate |
2001-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_960672494b1cee43b00a0d79286cae64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abe7fe6df5b291ddce835e450494b3dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fb440f4393adae5d4a2d1859dcf571a |
| publicationDate |
2004-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-593734-B |
| titleOfInvention |
A method and system for metal organic chemical vapor deposition (MOCVD) and annealing of lead germanite (PGO) thin films |
| abstract |
A method of making ferroelectric PGO thin films includes depositing Pb and Ge on a substrate using a thermal MOCVD process, wherein the Pb and Ge precursor gases are separately supplied to a region adjacent the substrate; annealing the substrate in a first annealing step; forming top electrodes on the substrate; and annealing the substrate in a second annealing step. A system for forming ferroelectric PGO thin films includes a reaction chamber, having a substrate support therein; a substrate located on said substrate support; precursor gas lines extending from a precursor gas source into said reaction chamber; background gas lines for providing a background gas into said reaction chamber; and separation means for separating the precursor gases until the precursor gases are adjacent said substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112663143-A |
| priorityDate |
2000-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |