| abstract |
The present invention discloses a manufacturing method for semiconductor device, which includes the following steps: separating the substrates carrying with semiconductor chip in matrix on the main surface to have a certain interval and placing between the lower mold and the upper mold of the forming mold and then clamping; injecting the insulating resin from the gate to be formed in the cavity on the main surface of the substrate; and, making the air in the cavity escaped from the venting hole to form the block molding package covering each semiconductor chip; forming bump electrodes on the back of the substrate; next, slicing the block molding package and the substrate in both longitudinal and lateral directions to produce the plurality of semiconductor devices. The venting holes are formed with the trenches in the substrate, and the trenches are configured on the extension lines of the areas for each chip row of the semiconductor chips fixed on the substrate, but not configured on the extension lines of the areas for each chip row. The width of trenches are narrower than the width of semiconductor chips. |