http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-589690-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-544 |
| filingDate | 2001-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_733bfee61a915c7654dd6f495dd6bdd9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7be7c9104c8f3f6a673087126184da0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19933cb41e8f250290f7f39f6b5c6d60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_738a844d2d1e8aad9e6e99ced7f9fc86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4c36359451edf820a0d2cd2f7c327b4 |
| publicationDate | 2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-589690-B |
| titleOfInvention | On-line monitoring silicon nitride loss method |
| abstract | A kind of on-line monitoring silicon nitride loss method is disclosed, which is applicable on a first insulation layer on a device region and all scribe lines by monitoring the loss condition of a first etching stop layer beneath the first insulation layer in a first contact opening after opening the first contact opening and a measuring opening. The method comprises: firstly providing a monitor wafer with a second etching stop layer and a second insulation layer sequentially stacked thereon, in which the operation condition for forming the second etching stop layer and the second insulation layer is the same as that of the first etching stop layer and the first insulation layer formed on the wafer, and in which the thickness of first insulation layer and the second insulation layer are the same, and the second etching stop layer has thickness greater than the first etching stop layer, with the thickness being greater than 1000 angstroms; patterning the second insulation layer to remove part of the second insulation layer and forming a thickness monitor opening and a second contact opening exposing the second etching stop layer in the second insulation layer, in which the pattern of second contact opening is the same as that of the first contact opening pattern; subsequently, performing a first measuring step to measure the first thickness loss and the second thickness loss of the thickness monitor opening on the monitor wafer and part of the second etching stop layer exposed from the second contact layer, respectively; then, generating the correlation between the first thickness loss and the second thickness loss; performing a second measuring step to measure the third thickness loss of the first etching stop layer in the thickness monitor opening on the wafer and comparing with the correlation to conjecture the fourth thickness loss of the first contact opening on the wafer. |
| priorityDate | 2001-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 |
Total number of triples: 20.