| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
1999-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66840f157e0987cffbab9f1492972bef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de270e4fdaf36e4ec655b89016754bea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2438984dae5b37b24e73ac128c2f3a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d53721c72fb3137ba87f37ca7eba9f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4fb8b4a0901de75deca6c5754ee3f04 |
| publicationDate |
2004-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-589398-B |
| titleOfInvention |
Filtering technique for CVD chamber process gases and the same apparatus |
| abstract |
A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity of the tungsten silicide deposition process. In one embodiment, a method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, comprises the steps that carrier gas line for the SiH4 silicon source gas is purged to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. Thus, particulate contaminant is removed or remains to the minimum having no affection in tungsten silicide deposition process. |
| priorityDate |
1998-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |