| abstract |
This invention provides a novel hybrid integrated circuit device and its process, the process being capable of forming a uniform thickness of the lower part of the resin encapsulated body 41 over a substrate 31 by transfer molding. The substrate 31 is placed in the mold with a curved surface 31d of the substrate 31 facing the lower mold 44, and a surface having burrs 31C facing the upper mold 45 when the hybrid integrated circuit device is transfer-molded. A molten thermo-setting type resin is supplied from the curved surface 31d side and the resin is filled in the mold below the substrate 31. Chips of the burrs 31 will not be present in the thermo-setting type resin below the substrate 31. As a result a necessary minimum thickness of the resin below the substrate 31 is assured, and a hybrid integrated circuit device capable of withstand high voltage and having good heat dissipating characteristics and excellent product quality can be obtained. |