Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-31 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-041 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8836 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2003-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2004-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a80ee9b5856b6b5f0affa1b76d8adb4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df5360aa370bc9dce1aa973d9c1e5d76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d864dd2bc22c2ceda5110352c717a01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bad9af37f6b570a239d0bb9f3c708ae1 |
publicationDate |
2004-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-580768-B |
titleOfInvention |
Polycrystalline memory structure, method for forming same structure, and semiconductor memory device using same structure |
abstract |
The present invention provides a polycrystalline memory structure comprising: a polycrystalline memory layer provided overlying a substrate, the polycrystalline memory layer having crystal grain boundaries forming gaps between adjacent crystallites; and a first insulating material located at least partially within the gaps. |
priorityDate |
2002-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |