http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-574130-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_67a84fcc1da3abb07d0266cfa2421ba5 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 |
| filingDate | 2003-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50400f5988ce19506642b5b691fac31d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccb6af56c535b8c8ee1ed8034038da45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_135243af973f6cbd37d7b113f41e2803 |
| publicationDate | 2004-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-574130-B |
| titleOfInvention | An innovative micro-fabrication for electroosmotic flow (EOF) control via a self-assembled monolayer by using a perpendicular electric potential |
| abstract | In the invention we proposed an innovative micro-fabrication for electroosmotic flow (EOF) control via a self-assembled monolayer by using a perpendicular electric potential. The microfluidic chip consisted of an upper layer with a micro-channel and a bottom substrate with a gate electrode and two drain/source contacts. A self-assembled monolayer (SAM) serving as the insulator was formed on the gate electrode. A longitudinally high voltage was applied to the two ends of micro-channel to offer the driving force of EOF. The surface potential of SAM insulator can be controlled by applying a varied gate voltage through the action of electric polarization. Because the surface potential dominated the polarity and magnitude of electric double layer, the direction and rate of EOF could be controlled by the gate voltage. As a result of the ultra-thin thickness (several nanometers) of the insulator, made of SAM, the advantages of microfluidic chip include ease of fabrication, a lowly induced gate voltage, and an excellent EOF control. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I691724-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11480575-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10527626-B2 |
| priorityDate | 2003-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.