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filingDate 2002-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2004-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-573341-B
titleOfInvention Locally increasing sidewall density by ion implantation
abstract A method is provided, the method comprising forming a first conductive structure, and forming a first dielectric layer above the first conductive structure. The method also comprises forming a first opening in the first dielectric layer above at least a portion of the first conductive structure, the first opening having sidewalls, and densifying the sidewalls.
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