| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_34263a1d9767236ba10183da556a136b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2ee9b5e70611aa4053826948eb5aa70 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b4f7762298b0059b0fb7d1b54b42a19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b2584a11e2b35e03b98bb760606c464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b40c9a65423d0e3a0da93b6eced5eb9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8506e3e4ee8534201fdcdd0a72bcbcf4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f32a45611b414f29c21a73fc5cf04433 |
| publicationDate |
2004-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-569429-B |
| titleOfInvention |
Method for manufacturing semiconductor integrated circuit device |
| abstract |
The present invention is to prevent the breakage and ablation of wiring composing the semiconductor integrated circuit device, such as bitlines on DRAM. The present invention is to deposit the HPD SiO film 34 with high density plasma CVD method on the bitlines BL connecting the source/drain areas (17) of MISFET for selecting memory cells of DRAM memory cells; after conducting rapid thermal annealing (RTA) under 750 DEG C, polishing the surface; then, forming the capacitor C connecting the other source/drain areas (17) of MISFET for selecting memory cells. Thus, even for conducting the RTA for crystallization of SiTa film for the capacitor insulative film composing the capacitor C, the present method can still reduce the film stress applied on the bitlines BL for preventing the breakage and ablation of bitlines BL. |
| priorityDate |
2001-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |