| abstract |
The present invention provides a positive resist composition, during producing the semiconductor device, comprising high sensitivity, high resolution, having the square shape, the less etching rough of line pattern, and the size change little while the pattern copy on the layer below in the oxygen plasma etching process. The positive resist composition of the present invention has the characteristics comprising the repeat units having the specific structure, and the high molecular compound of the repeat unit having the group which can acid-decompose to produce the acid radical. |