http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-565631-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
filingDate | 1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c99502fdb492f0b00b530c34e5720e9b |
publicationDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-565631-B |
titleOfInvention | Silicon wafer storage water and silicon wafer storage method |
abstract | Storage water used for storage of a silicon wafer in water is disclosed. The storage water contains Cu at a concentration of 0.01 ppb or less. A method of storing a silicon wafer in water is also disclosed. In the method, water containing Cu at a concentration of 0.01 ppb or less is used. In another method, a wafer is stored in water or a chemical solution, to which a chelating agent is added. The storage water and the storage methods can prevent degradation of oxide dielectric breakdown voltage which would otherwise occur due to Cu contamination from the storage water. |
priorityDate | 1997-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.