http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-564472-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf2e954ce827b41c874e15aea5c94e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a96b091f80b5b4f0fea96f9df0d6324 |
| publicationDate | 2003-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-564472-B |
| titleOfInvention | Method of defining silicon oxide/silicon nitride/silicon oxide dielectric layer |
| abstract | A kind of method for defining silicon oxide/silicon nitride/silicon oxide dielectric layer is revealed in the present invention. At first, a substrate is provided. On the substrate, the first silicon oxide layer, a silicon nitride layer and the second silicon oxide layer are sequentially formed to form a dielectric layer. After that, a silicon layer for use as a protection layer is formed on the dielectric layer. Then, a photoresist pattern layer is formed on the silicon layer and is used as the mask to perform etching process till exposing the substrate surface. Finally, after removing the photoresist pattern layer, the sidewall fence residual generated when performing etching process is removed through the use of hydrofluoric acid solution and ammonia-hydrogen per oxide solution to clean substrate. |
| priorityDate | 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.