| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate |
2002-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cad89cdea119ff9571ff389f6a02460e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83d4ca072a20fd9dd5c679182919bb20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3957910e54bfc7839a8641e3d369167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_305d0f7f40adeeb45a701fff931984ef |
| publicationDate |
2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-563201-B |
| titleOfInvention |
Dry developing method |
| abstract |
A dry developing method leads processing gas between parallel flat plate electrodes installed in a vacuum processing container 102 and forms the plasma of the processing gas by applying a high frequency power to the electrodes for drawing a photoresist formed on a processed body 150 by a first step of plasma-processing the resist on an etched layer 152 having an already developed upper layer resist 156 containing silicon and a lower layer resist 154 installed in contact with the lower layer of the upper layer resist 156, in which the lower layer resist 154 is processed by a first process for plasma-processing by using the mixed gas of carbon monoxide gas and oxygen gas, and a second step for plasma-processing by using the mixed gas of nitrogen gas and hydrogen gas to perform a dry etching to the photoresist formed on the processed body 150. Accordingly, it is able to perform a dry developing to the photoresist in a highly accurate and highly efficient manner. |
| priorityDate |
2001-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |