| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2002-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee4c316737d77418bbbde5dba7b7f712
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bc522871787239afefd26a162829b5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9e7af2b5434bd8462c43bcfcd1e4d70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf5585d052e8cc99764c50fb973a612e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_563aec0b6a1d8e3ba956c2519aa6364f |
| publicationDate |
2003-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-561623-B |
| titleOfInvention |
IC type Schottky barrier diode and process therefor |
| abstract |
This invention provides an IC type Schottky Barrier Diode, having a plurality of Schottky Barrier Diodes isolated by insulation regions by ion planting. Thus the conventional undulated surface because of the trenches or polyimide and GaAs surface is avoided and the spacial margins for allowing slight misalignment of the masks are not required. As a result a significant reduction of the size of the chip and a simplified process are possible. |
| priorityDate |
2001-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |