| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b08374cf0cad9c6f3b663da00787c13 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate |
2003-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_183c734bea842c49f50ffbc88a630734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249ba758d63f740b5bbfc19532677e9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f0acdec64109faa75196f48670723ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f52d1769d3722872fffac773810715d |
| publicationDate |
2003-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-559630-B |
| titleOfInvention |
Process and apparatus for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, and diffusion of dopants out of the wafer is avoided |
| abstract |
The present invention relates to a process for epitaxially coating the front surface of a semiconductor wafer in a CVD reactor, the front surface of the semiconductor wafer being exposed to a process gas which contains a source gas and a carrier gas and the back surface of the semiconductor wafer being exposed to a displacement gas, wherein the displacement gas contains no more than 5% by volume of hydrogen, with the result that diffusion of dopants out of the back surface of the semiconductor wafer, which is intensified by hydrogen, is substantially avoided. With the process according to the invention, it is possible to produce a semiconductor wafer with a substrate resistivity of <= 100 mOmegacm and a resistivity of the epitaxial layer of > 1 Omegacm without back-surface coating, the epitaxial layer of which semiconductor wafer has a resistance inhomogeneity of < 10%. |
| priorityDate |
2002-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |