| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2002-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8038d77635ca5bdf739647ef97e7272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59efea53fad992ef4eb989469d63a758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83ca042f0ff271d590b6a0541d8b6892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f9407049bd305c664cfdef69db83a61
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00ce9d5a55c9464556bba6a4f12c24f |
| publicationDate |
2003-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-558796-B |
| titleOfInvention |
A method of forming gate dielectrics having various equivalent oxide thickness |
| abstract |
A method of forming gate dielectrics having various equivalent oxide thickness is provided. Gate dielectrics having various equivalent oxide thickness are formed by selectively nitrifying gate dielectrics or by selectively forming a metal oxide layer having a high dielectric constant on portions of a substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I607080-B |
| priorityDate |
2002-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |