http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-556316-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b77bc4a635ea00a1cb4e499e4d9ce206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c27fa74444412b7fabc58e48b909d36b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a7f40c5ecc3b7345deb0d0340b739d |
| publicationDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-556316-B |
| titleOfInvention | A method of fabricating a shallow trench isolation with high aspect ratio |
| abstract | A method of fabricating a shallow trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling a part of the trench by high density plasma chemical vapor deposition; and depositing a second isolation layer filling the trench without void by low pressure chemical vapor deposition. According to the present invention, a void-free shallow trench isolation with high aspect ratio is accomplished. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I616923-B |
| priorityDate | 2002-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.