http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-556276-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6206e07b7f21898508847eaed11c98c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c618b1e7d61abaf87b034cfbd217e060 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e45c9128a2ebb2960ba3bd490bb8b19b |
| publicationDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-556276-B |
| titleOfInvention | Manufacturing method of gate dielectric layer |
| abstract | A manufacturing method of gate dielectric layer is provided in the present invention. At first, a silicon substrate is provided. Then, a nitridation process containing nitrogen atom plasma is conducted to form a thin silicon nitride layer on the substrate surface. After that, an oxidation process containing oxygen atom plasma is used to oxidize the silicon nitride layer and part of the substrate to form the multi-structured gate dielectric layer having silicon oxide layer and silicon-oxynitride layer, in which the silicon oxide layer is located between the silicon substrate and the silicon-oxynitride layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105655246-A |
| priorityDate | 2002-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.