Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9afd626b14ef4bfd1a0cbc8b5bae6a13 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136236 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1333 |
filingDate |
2002-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed52aa8c40d3fac9a9caf43d8e3500b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f24303260cc1e20c62764ee8925a1fc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63d5343d4d6dc8d19330ac41c0cb0327 |
publicationDate |
2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-556034-B |
titleOfInvention |
Method for manufacturing active matrix substrate |
abstract |
In a step for forming a contact through hole in a protective film that covers a thin film transistor (TFT) to connect a source electrode of the TFT and a pixel electrode to each other, location of a later-formed contact through hole is designed to be apart not less than 2.0 mum from location of the opening of an overcoat layer, which opening is formed on the protective film. This construction forces the opening of a novolac type photosensitive resist to be positioned inside the location of the opening of the overcoat layer and therefore, the contact through hole formed in the protective film is able to have a tapered cross sectional profile that is never affected by the opening of the overcoat layer, allowing for stable connection between the source electrode and the pixel electrode. |
priorityDate |
2001-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |