http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-555747-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2602-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C2603-86 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C69-753 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F32-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-753 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C69-00 |
| filingDate | 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ef552c51996da668b98c65da511d09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be320ab77e8e1113b2306ca0a89a14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631 |
| publicationDate | 2003-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-555747-B |
| titleOfInvention | Novel tertiary alcohol compounds having alicyclic structure |
| abstract | Novel tertiary alcohol compounds of formula (1) are provided, in which R1 and R2 each independently is a C1-10 linear, branched or cyclic alkyl group which may have partial or full halogen substituents; in addition, R1 and R2 may form an aliphatic hydrocarbon ring; Y and Z are each a single bond or an independent divalent C1-10 linear, branched or cyclic alkyl organic group; and k=0 or 1. Using the tertiary alcohol compounds as a monomer, polymers are obtained; a resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, etching resistance and substrate adhesion, which lends itself to micropatterning with electron beams or far UV rays. Especially because of the minimized absorption at the exposure wavelength of an ArF or KrF excimer laser, a finely defined pattern perpendicular to the substrate can easily be formed; the resist composition is thus suitable as micropatterning material for ultra LSI fabrication. |
| priorityDate | 2000-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 99.