| abstract |
To obtain a resist material comprising a polymeric compound bearing a group represented by general formula (1) (wherein R1, R2, R3 and R4 are each hydrogen atom, fluorine atom, a 1-20C linear, branched or cyclic alkyl group or a fluoroalkyl group; and at least one of R1, R2, R3 and R4 contains a fluorine atom). The resist material is sensitive to high energy beams, excellent is sensitivity, resolution and plasma etching resistance at a wavelength of 200 nm or less, particularly 170 nm or less, and furthermore capable of suppressing progress of crosslinking. These features allow the resist material to have low absorption at an exposure wavelength of the F2 excimer laser in particular and to easily form a pattern fine and perpendicular to the substrate. The resist material is therefore suitable as a fine pattern-forming material for manufacturing a very large-scale integrated circuit. |