| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F2810-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F212-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-106
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-1811 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F212-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F8-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F8-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F212-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F8-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
2000-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e741e2370a4d001d8ee2356810e27adf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b731e7b9f346079d85b7358b959d799
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f7d4cb926c15108af25b915355facc |
| publicationDate |
2003-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-552475-B |
| titleOfInvention |
A resist composition |
| abstract |
This invention relates to a polymer capable of forming an ultra-fine pattern with excellent rectangular shape in a silylated surface resolution process using a chemically amplified type resist composition as single layer or the most upper layer among multiple layers and to a resist composition using the polymer. The said polymer and resist composition are useful in a silylated surface resolution process, and by conducting the silylated surface resolution process using the said resist composition, contrast of silylation becomes higher and it becomes possible to obtain ultra-fine pattern regardless of the kind of exposure energy. |
| priorityDate |
1999-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |