| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-012 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7396
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0716
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-356113 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-012 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8248 |
| filingDate |
2002-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9de40fdba40e626a6ec67d9930cdec2 |
| publicationDate |
2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-550788-B |
| titleOfInvention |
Semiconductor circuit |
| abstract |
A semiconductor circuit is provided which has a high breakdown voltage and is capable of outputting a large current. Field transistors (Q1, Q11) are cross-coupled. The gate of the first field transistor (Q1) and the drain of the second field transistor (Q11) are not directly connected to the drain of an MOS transistor (Q4) but are connected to the base of a bipolar transistor (Q12). The second field transistor (Q11) has its source connected to the collector of the bipolar transistor (Q12) and the MOS transistor (Q4) has its drain connected to the emitter of the bipolar transistor (Q12). When the current amplification factor of the bipolar transistor (Q12) is taken as beta, then the current of the output (SO) can be increased approximately beta times. |
| priorityDate |
2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |