http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-550745-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e701a6371e470f08800af7ec7b4073e |
| publicationDate | 2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-550745-B |
| titleOfInvention | Structure and method for prevention defect generation on metal wire |
| abstract | A kind of structure and method for prevention defect generation on metal wire is disclosed, especially, the structure and method capable of preventing the void defects formed on the via plug bottom due to stress migration between the metal wire and the barrier layer. This invention provides a metal silicide layer, which can effectively convert the contact surface characteristics between the barrier layer on the bottom of the via plug and the metal layer to obtain the advantages of original barrier layer such as prevention of electro-migration and high temperature diffusion, so that the above-mentioned stress migration taking place on the contact surface and thus generation of void defects can be prevented. |
| priorityDate | 2002-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.