http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-550644-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02N13-00
filingDate 2002-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28dcab1f093b7acf0115e7e99c507136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16188c77e1e30468857aca46f3dcf194
publicationDate 2003-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-550644-B
titleOfInvention Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
abstract Apparatus for retaining a workpiece in a semiconductor processing chamber and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode. A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I627702-B
priorityDate 2001-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.