| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_34263a1d9767236ba10183da556a136b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66916 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249 |
| filingDate |
2002-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6b4ee3e76200633db90fc1d80e330cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb09a57ed18f858a47eefcbd422c9d6a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04f804b214c1559da5055b405941d2b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd3227370e86170a383b6fd6d60976ad
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bf024c332715c1c60174795eaa084a1 |
| publicationDate |
2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-546836-B |
| titleOfInvention |
Semiconductor device and a method of manufacturing the same |
| abstract |
This invention relates to a method for manufacturing a semiconductor device, comprising the steps of: (a) depositing a silicon nitride film on a semiconductor substrate; (b) depositing a base electrode forming silicon film of a bipolar transistor on the silicon nitride film; (c) depositing a first silicon oxide film on the base electrode forming silicon film; (d) forming an opening that reaches the silicon nitride film on the first silicon oxide film and the base electrode forming silicon film; (e) forming a second silicon oxide film on the side surface of the base electrode forming silicon film that is exposed from the aperture by applying oxidation treatment on the semiconductor substrate; (f) etching and removing the silicon nitride film isotropically, so that a side surface of the silicon nitride film is recessed from a side surface of the silicon film that forms the base electrode in the opening by applying wet etching treatment on the silicon nitride film; and (g) forming an epitaxial layer that forms the base region selectively on the semiconductor substrate that is exposed from the opening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048103-B2 |
| priorityDate |
2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |