http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-546695-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbd3ed260a501680f2553f59bd1ffb9e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4680eac2412c0027c18e6f9f7b8bcc1a |
| publicationDate | 2003-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-546695-B |
| titleOfInvention | Method for manufacturing a capacitor of semiconductor device |
| abstract | The subject of the invention is to provide a method for manufacturing a capacitor of semiconductor device so as to have the capability of improving leakage current characteristics. In the invention, an ALD method and MO source material are used when forming the upper electrode in a metal MIS capacitor structure; and a TiN film is formed by low-temperature deposition and is followed by miniaturizing the crystallization reaction of the TiN film so as to prevent from surface roughness and C1 contained inside the TiN film. The solving means is described in the following. The method for manufacturing a capacitor of semiconductor device includes the step of forming a nitride film 120 through the use of plasma to conduct nitridation or oxy-nitridation onto the silicon substrate 100 formed with the lower electrode; the step of forming a dielectric film 140 on the nitride film 120 through the use of chemical vapor containing tantalum content; and the step of forming TiN film of the upper electrode 160 on the dielectric film 140 by using ALD method. |
| priorityDate | 2001-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.