abstract |
The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. In structure, the barrier insulating film 34a comprises a double-layered structure or more that is provided with at least a first barrier insulating film 34aa containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film 34ab containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon. |