http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-541596-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4409 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2002-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43a35d9c77a33cd910b6fadec2480a55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c52a4109b4519fe1b8ffb1bb5db9d11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47be6b9815923851466000c1ada8cd89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7094de31507f43ea8007560c7e58088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7348f9844133b1bfd0bbce2c8630c61d |
| publicationDate | 2003-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-541596-B |
| titleOfInvention | Substrate processing apparatus and method for manufacturing semiconductor device |
| abstract | An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21. A gas supplying nozzle 4 which is introduced from the flange 7 is extended from the space 21 to the space 20 so that a reaction gas is directly introduced into the space 20 to thereby prevent a contaminant Within the space 21 from being involved in the space 20. |
| priorityDate | 2001-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.