http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-535263-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6623826fb005ec2357960fdc6dcc8490 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-334 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate | 2001-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d08246bb22da0ec05027f93c01e79943 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9c6647e61d83b22d8f02a64239f199f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af2ad0e3ad2fcd350c9180e00bdaa712 |
| publicationDate | 2003-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-535263-B |
| titleOfInvention | (PF/dram/KP) method and structure of incorporating RUTILE TiO2 and other high k dielectrics in a deep trench storage cell of dram |
| abstract | A trench capacitor structure comprising a buried electrode about a trench, said trench being formed in a semiconductor substrate, a node dielectric lining said trench at said buried electrode and trench electrode formed on said node dielectric, said node dielectric comprising a diffusion barrier and a high dielectric constant dielectric such as rutile phase TiO2 is provided. A method of fabricating such a trench structure is also provided, said method comprising (a) providing a semiconductor substrate having at least one trench formed therein, said at least one trench being defined by a trench wall; (b) forming a buried electrode in said semiconductor substrate about at least a portion of said trench wall; (c) forming a diffusion barrier on said trench wall over at least a portion of said buried electrode; (d) forming a dielectric material having a high dielectric constant, e.g., rutile phase TiO2, on said diffusion barrier; and (e) forming a first conductive layer on said high k dielectric, said first conductive layer forming a trench electrode. |
| priorityDate | 2000-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.